July 5, 2019

K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor.

Figure 14 shows the operation sequence. Line Protection, Backups BX Once the program process starts, the Read Status Register command may be entered to read the status register. The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks. The device provides cache program in a block.

K9F2G08U0M Datasheet pdf – FLASH MEMORY – Samsung Electronic

VIL can undershoot to Random data output can be operated multiple times regardless of how many times it is done in a page. Two types of operations are available: In addition to the enhanced architecture and interface, the datasehet incorporates copy-back program feature from one page to another page without need for transporting the data to kf2g08u0m from the external buffer memory. Minimum DC voltage is The invalid block s status is defined by the 1st byte X8 device or 1st word X16 device in the spare area.

When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or dataeheet operation.


The device may output random data in a page instead of the consecutive sequential data by writing random data output command. SeekIC only pays the seller after confirming you have received your order.

K9F2G08U0M-YCB0 Price & Stock | DigiPart

If program operation results in an error, map out the block including the page in error and copy the target data to another block. Additional invalid blocks may develop while being used. The Page Program confirm command 10h initiates the programming process.

The K9F2G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility. Some other commands, like page read and block erase and page program, require two cycles: Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. The random read dztasheet is enabled when the page address is changed. Therefore, if the status register is read during a random read cycle, the read command 00h should be given before starting read cycles.

Each of the 32 cells resides in a different page. Refer to table 3 for device status after reset operation. Data input cycle for modifying a portion or multiple j9f2g08u0m portions of the source page is allowed as shown in Figure Do not erase or program factory-marked bad blocks. Month Sales Transactions.


256M X 8 Bit / 128M X 16 Bit NAND Flash Memory

K9f2g0u80m number of valid blocks is datashest with both cases of invalid blocks considered. Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively.

The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. Writing 10h alone without previously entering the serial data will not initiate the programming process.

The following possible failure modes k9f2f08u0m be considered to implement a highly reliable system. The command register remains in Read ID mode until further commands are issued to it.

The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. Serial access may be done after power-on without latency. When the device datxsheet in Busy state during random read, program or erase mode, the reset operation will abort these operations. The information regarding the invalid block s is so called as the invalid block information.


AC Waveforms for Power Transition 1. The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address input after power-on. Added addressing method for program operation 0. Device operations are selected by writing specific commands into the command register.